Nec. | Test item | Criterium | |
1 | Voltage | dato voltage | 4.2±0.05V |
Libra voltage pro una cellula |
4.2±5mA |
||
2 |
Current | Libra current pro una cellula |
â¤200μA |
Current consummatio |
35A |
||
Maxime continua currentes præcipiens |
35A |
||
Maxime continua eminus current |
4.25V±0.025V |
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3 |
Per causam Praesidium |
Plus crimen deprehensio voltage pro una cellula |
0.5Sâ1.5S |
Per crimen deprehensio mora temporis |
4.15V±0.05V |
||
Super crimen emissio voltage pro una cellula |
2.70V±0.08V |
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4 |
Per missionem praesidium |
Per missionem deprehensio voltage pro una cellula |
2.75±0.09V |
Per missionem deprehensio mora temporis |
0.5Sâ1.5S |
||
Super missionis voltage pro una cellula |
3.0±0.10V |
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5 |
Per current praesidium |
Plus current deprehensio voltage |
100±25mv |
Plus current deprehendatur current |
18±2A |
||
Mora deprehendatur tempore |
100msâ500ms |
||
Dimittere conditionem |
70±5A |
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6 |
Brevis praesidium |
Deprehensio conditio |
0.5Sâ1.5S |
Mora deprehendatur tempore |
3.0±0.10V |
||
Dimittere conditionem |
100±25mv |
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7 |
Resistentia |
Praesidium circuitryï¼MOSFETï¼ |
70±5A |
8 |
Temperature |
Temperature Range operating |
500mSâ1500mS |
Repono Temperature Range |
Cut onus, Auto-Recuperatio |
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9 |
Temperatus praesidium |
Praecipiens caliditas praesidium |
Exterior brevis circuitus |
Is dato praesidio humilis temperatus |
200-500us |
||
Dimisso caliditas praesidium |
Cut onus, Auto-Recuperatio |
||
Praecipiens caliditas Release |
â¤50mΩ |
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10 |
Communicatio protocol |
|
I2C |
11 |
Voltage current facultatem accurate |
|
±1% |
12 |
Typical altilium facultatem |
|
9000mAh |